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2SB1176 - PNP Transistor

Key Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Large collector current IC.
  • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 0.9±0.1 0˚ to 0.15˚.
  • Absolute Maximum Ratin.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 (1.0) (1.0) Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 0.9±0.1 0˚ to 0.