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Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD1742, 2SD742A ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2
Unit: mm
0˚ to 0.15˚
2.5±0.2
12.6±0.3 7.2±0.3
1.1±0.1
Parameter Collector-base voltage (Emitter open) 2SB1172 2SB1172A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating −60 −80 −60 −80 −5 −3 −5 15 1.3 150 −55 to +150
Unit V
1.0±0.2
0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4
0.9±0.1 0˚ to 0.
2SB1172A Datasheet
