Overview: Transistor 2SB1398
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 q q q Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* (Ta=25˚C)
Ratings –30 –25 –7 –8 –5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 0.45–0.05 +0.1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 1 2 3 0.45–0.05 +0.1 2.5±0.5 2.5±0.5 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.2±0.1 0.65 max.
0.1 0.45+ – 0.05 2.5±0.1 (HW type) s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C)
Symbol ICBO IEBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz
*2 min typ max –100 –100 –25 –7 90 205 –1 120 85 14.5±0.5 0.5 4.5±0.
