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2SB788 - Silicon PNP Transistor

Datasheet Summary

Features

  • q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings.
  • 120.
  • 120.
  • 7.
  • 50.
  • 20 400 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 1.25±0.05 0.45±0.05 2 1 2.5.

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Datasheet Details

Part number 2SB788
Manufacturer Panasonic Semiconductor
File Size 36.82 KB
Description Silicon PNP Transistor
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Transistor 2SB788 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD958 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –120 –120 –7 –50 –20 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 1.25±0.05 0.45±0.05 2 1 2.5 2.
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