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2SC2671F Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Transistor 2SC2671(F) Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature *REB (Ta=25˚C) Ratings 15 14 2 80 600 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 2.54±0.15 1 2 3 0.45 –0.1 1.27 +0.2 Symbol VCBO VCER* VEBO IC PC Tj Tstg 13.5±0.5 Low noise figure NF. High gain. High transition frequency fT. 5.1±0.

Key Features

  • 0.45.
  • 0.1 1.27 +0.2 2.3±0.2 1:Base 2:Emitter 3:Collector JEDEC:TO.
  • 92 EIAJ:SC.
  • 43A = 1kΩ s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE fT.
  • Cob.
  • | S21e NF.
  • |2 GUM.
  • Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 40mA VCE = 8V,.

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