43A
= 1kΩ
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25˚C)
Symbol ICBO IEBO hFE fT.
Cob.
| S21e NF.
|2 GUM.
Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 40mA VCE = 8V,.
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Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
5.0±0.2 4.0±0.2
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
*REB
(Ta=25˚C)
Ratings 15 14 2 80 600 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C
2.54±0.15 1 2 3 0.45 –0.1 1.27
+0.2
Symbol VCBO VCER* VEBO IC PC Tj Tstg
13.5±0.5
Low noise figure NF. High gain. High transition frequency fT.
5.1±0.2
s Features
0.45 –0.1
1.27
+0.2
2.3±0.
2SC2671F Datasheet
