The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SC3496, 2SC3496A
Silicon NPN triple diffusion planar type
For power switching
8.5±0.2
Unit: mm
3.4±0.3
■ Features
6.0±0.2
1.0±0.1
3.0–+00..24 4.4±0.5
14.4±0.5
10.0±0.3 1.5±0.1
• High-speed switching
1.5–+00.4
• High collector-base voltage (Emitter open) VCBO
4.4±0.5 2.0±0.5
• Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
0 to 0.4
0.8±0.1 2.54±0.3 1.4±0.1
R = 0.5 R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5) (6.0) 1.3
(7.6) (1.5)
e Collector-base voltage 2SC3496 VCBO
900
V
pe) (Emitter open)
2SC3496A
1 000
nc d ge.
2SC3496 Datasheet
