2SC3495 - NPN Epitaxial Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC3495
Manufacturer	Sanyo Semicon Device
File Size	89.67 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3495 Datasheet
Additional preview pages of the 2SC3495 datasheet.

Adoption of FBET process.
High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Small Cob (Cob=1.8pF typ). Package Dimensions unit:mm 2003A [2SC3495] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current.

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Published: Mar 22, 2005 |