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2SC3496A - Silicon NPN Transistor

Key Features

  • 6.0±0.2 1.0±0.1 3.0.
  • +00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1.
  • High-speed switching 1.5.
  • +00.4.
  • High collector-base voltage (Emitter open) VCBO 4.4±0.5 2.0±0.5.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
  • Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 0 to 0.4 0.8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching 8.5±0.2 Unit: mm 3.4±0.3 ■ Features 6.0±0.2 1.0±0.1 3.0–+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 • High-speed switching 1.5–+00.4 • High collector-base voltage (Emitter open) VCBO 4.4±0.5 2.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 0 to 0.4 0.8±0.1 2.54±0.3 1.4±0.1 R = 0.5 R = 0.5 1.0±0.1 0.4±0.1 5.08±0.5 123 (8.5) (6.0) 1.3 (7.6) (1.5) e Collector-base voltage 2SC3496 VCBO 900 V pe) (Emitter open) 2SC3496A 1 000 nc d ge.