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2SC5380A - Silicon NPN triple diffusion mesa type Power Transistor

Download the 2SC5380A datasheet PDF. This datasheet also covers the 2SC5380 variant, as both devices belong to the same silicon npn triple diffusion mesa type power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5° 1 2 3 2.0 1:Base 2:Collector 3:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC5380_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC5380A
Manufacturer Panasonic
File Size 37.37 KB
Description Silicon NPN triple diffusion mesa type Power Transistor
Datasheet download datasheet 2SC5380A Datasheet

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Other Datasheets by Panasonic

Part Number Description
2SC5380 Silicon NPN triple diffusion mesa type Power Transistor
2SC5381 NPN Transistor
2SC5335 NPN TRANSISTOR
2SC5346 NPN TRANSISTOR
2SC5346 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1500 600 5 20 16 8 100 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 4.0 2.0±0.2 1.1±0.