Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
I Features
- High-speed switching
- High collector to base voltage VCBO
- Wide area of safe operation (ASO)
- Satisfactory linearity of forward current transfer ratio hFE
- Full-pack package which can be installed to the heat sink with one
/ screw
14.0±0.5 Solder Dip
(4.0) e pe) I...