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2SC5863 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Transistors 2SC5863 Silicon NPN epitaxial planar type For general amplification 0.40+–00..0150 3 Unit: mm 0.16+–00..0160 1.50–+00..0255 2.8–+00..32 0.4±0.

Key Features

  • 5˚.
  • High collector-emitter voltage (Base open) VCEO 1 2 (0.65).
  • High transition frequency fT (0.95) (0.95) 1.9±0.1 2.90+.
  • 00..0250 /.
  • Absolute Maximum Ratings Ta = 25°C 10˚ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 300 1.1.
  • +00..12 1.1.
  • +00..13 V c type Collector-emitter voltage (Base open) VCEO 300 0 to 0.1 V n d tage. ued Emitter-base voltage (Collector open) VEBO 7 V le s ontin Collector cur.

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2SC5863 Distributor