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2SD1205 - Silicon NPN Transistor

Key Features

  • q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) 3 2 1 Ratings 30 60 25 50 5 750 500 400 150.
  • 55 ~ +150 Unit V 1:Base 2:Collector 3:Emitter 2.5 2.5 emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C.

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Datasheet Details

Part number 2SD1205
Manufacturer Panasonic
File Size 51.34 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1205 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) 3 2 1 Ratings 30 60 25 50 5 750 500 400 150 –55 ~ +150 Unit V 1:Base 2:Collector 3:Emitter 2.5 2.