q q
High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. (Ta=25˚C)
Ratings 120 120 5 1 0.5 1 150.
55 ~ +150 Unit V V V A A W ˚C ˚C
1.27 0.45.
0.1
+0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.5± 0.5
s Absolute M.
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Transistor
2SD1211
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB987
5.9± 0.2
Unit: mm
4.9± 0.2
s Features
q q
High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.
(Ta=25˚C)
Ratings 120 120 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
1.27 0.45–0.1
+0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.5± 0.5
s Absolute Maximum Ratings
2.54± 0.15
0.7–0.2
+0.3
0.7± 0.1
8.6± 0.2
0.45–0.1 1.27
+0.
2SD1211 Datasheet
