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2SD1280 - Silicon PNP Transistor

Key Features

  • q q 4.5±0.1 1.6±0.2 1.5±0.1 q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 20 20 5 2 1 1 150.
  • 55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 2.6±0.1 0.4max. 45° 1.0.
  • 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0.
  • 0.20 0.

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Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 20 20 5 2 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.