Overview: Power Transistors 2SB968
Silicon PNP epitaxial planar type
Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C)
Ratings –50 –40 –5 –3 –1.5 20 150 –55 to +150 Unit V V V A A W
0.6 2.3 2.3 0.75 6.5±0.2 5.35 4.35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm ˚C ˚C
1 2 3
2.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (TC=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE
* Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 VEB = –5V, IC = 0 IC = –1mA, IE = 0 IC = –2mA, IB = 0 VCE = –5V, IC = –1A IC = –1.5A, IB = – 0.15A IC = –2A, IB = – 0.2A VCB = –5V, IE = 0.5A, f = 200MHz VCB = –20V, IE = 0, f = 1MHz min typ max –1 –100 –10 6.0 5.5±0.2 13.3±0.3 1.8 1.0± 0.
