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2SD1611 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington For power amplification 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.

Key Features

  • q q q 1.5max. 1.1max. High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction tem.

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