Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type Darlington
For power amplification
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1 s Features q q q
1.5max.
1.1max.
High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.5min.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3 s...
