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2SD1996 - Silicon NPN Transistor

Key Features

  • q q q q 0.65 max. 14.5±0.5 0.45.
  • 0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150.
  • 55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45.
  • 0.05 2.5±0.5 1 2 2.5±0.5 3 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation J.

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Datasheet Details

Part number 2SD1996
Manufacturer Panasonic
File Size 43.85 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1996 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD1996 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 (1.45) ±0.05 0.8 s Features q q q q 0.65 max. 14.5±0.5 0.45–0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45–0.05 2.5±0.5 1 2 2.5±0.5 3 +0.