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2SD1994A - Silicon NPN Transistor

Datasheet Summary

Features

  • Low collector to emitter saturation voltage VCE(sat).
  • Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A.
  • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45.
  • 0.05 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation.
  • Junction temperature Storage temp.

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Datasheet Details

Part number 2SD1994A
Manufacturer Panasonic Semiconductor
File Size 69.86 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1994A Datasheet
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Full PDF Text Transcription

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Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SB1322A I Features • Low collector to emitter saturation voltage VCE(sat) • Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1.5 1 1 150 −55 to +150 Unit V V V A A W °C °C 1.2±0.1 0.65 max. 0.1 0.45+ − 0.
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