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2SD1993 - Silicon NPN Transistor

Datasheet Summary

Features

  • 0.15 0.7 4.0 Unit nA µA V V V 55 55 7 210 650 1.0 200 150 VCE(sat) V MHz mV.
  • h FE Rank classification R 210 ~ 340 S 290 ~ 460 T 360 ~ 650 hFE Rank 1 Transistor PC.
  • Ta 500 120 Ta=25˚C 100 IB=400µA 350µA Ta=25˚C 300µA 250µA 80 200µA 60 150µA 100µA 50µA 100 2SD1993 IC.
  • VCE 120 25˚C VCE=5V IC.
  • VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 400 Ta=75˚C 80.
  • 25˚C 300 60 200 40 40 100 20 20.

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Datasheet Details

Part number 2SD1993
Manufacturer Panasonic Semiconductor
File Size 40.75 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1993 Datasheet
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Full PDF Text Transcription

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Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45–0.05 +0.1 (Ta=25˚C) 1 2 3 0.45–0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.5±0.5 2.5±0.5 +0.1 Ratings 55 55 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.5±0.
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