2SD1995 - Silicon NPN Transistor

Panasonic

Key Features

0.15 0.7 4.0 1 Transistor PC.
Ta 500 160 Ta=25˚C 140 400 100 25˚C Ta=75˚C 80.
25˚C 2SD1995 IC.
VCE 120 VCE=10V IC.
VBE Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 IB=100µA 90µA 80µA 70µA 60µA 50µA 40µA 30µA 20µA 10µA 300 Collector current IC (mA) 60 200 40 100 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V).

2SD1995 silicon npn transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SD1995
Manufacturer	Panasonic
File Size	40.69 KB
Description	Silicon NPN Transistor
Datasheet	2SD1995 Datasheet

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Part Number	Description
2SD1991A	Silicon NPN Transistor
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2SD1996	Silicon NPN Transistor

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Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q q 0.45–0.05 +0.1 (Ta=25˚C) 1 2 3 0.45–0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.5±0.5 2.5±0.5 +0.1 Ratings 50 40 15 100 50 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.5±0.