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2SD1991A - Silicon NPN Transistor

Datasheet Summary

Features

  • 0.15 0.7 4.0 0.8 Unit µA µA V V V 60 50 7 160 90 0.1 150 3.5 0.3 460 V MHz pF FE1 Rank classification Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 Rank hFE1 1 Transistor PC.
  • Ta 500 60 Ta=25˚C IB=160µA 50 1000 2SD1991A IC.
  • VCE 1200 VCE=10V Ta=25˚C IB.
  • VBE Collector power dissipation PC (mW) Collector current IC (mA) 400 40 Base current IB (µA) 140µA 120µA 100µA 30 80µA 20 60µA 40µA 10 20µA 800 300 600 200 400 100 200 0 0 20 40 60 80 100 120 140 160 0.

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Datasheet Details

Part number 2SD1991A
Manufacturer Panasonic Semiconductor
File Size 49.93 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1991A Datasheet
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Full PDF Text Transcription

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Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45–0.05 0.45–0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 1 2.5±0.5 2 2.5±0.5 3 60 50 7 200 100 400 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.5±0.1 Ratings Unit +0.
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