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2SD2177A - Silicon NPN Transistor

Datasheet Summary

Features

  • q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature.
  • 1 (Ta=25˚C) Ratings 60 60 5 2 3 1 150.
  • 55 ~ +150 1cm2 Unit 0.45.
  • 0.05 0.45.
  • 0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO IC ICP.

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Datasheet Details

Part number 2SD2177A
Manufacturer Panasonic Semiconductor
File Size 39.08 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2177A Datasheet
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Full PDF Text Transcription

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Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25˚C) Ratings 60 60 5 2 3 1 150 –55 ~ +150 1cm2 Unit 0.45–0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO IC ICP PC*1 Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V A A W ˚C ˚C 1.2±0.1 0.65 max. 0.1 0.45+ – 0.
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