q q
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 1.0
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SD2177A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
0.7
4.0
s Features
q q
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
0.65 max.
1.0 1.0
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*1
(Ta=25˚C)
Ratings 60 60 5 2 3 1 150 –55 ~ +150 1cm2 Unit
0.45–0.05
0.45–0.05
+0.1
+0.1
Symbol VCBO VCEO VEBO IC ICP PC*1 Tj Tstg
2.5±0.5 1 2
2.5±0.5 3
V V A A W ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+ – 0.
2SD2177A Datasheet
