2SD2178 - Silicon NPN epitaxial planar type Transistor
Panasonic
Key Features
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package.
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1.
hFE2 Collector-emitter saturation voltage Base-emitter saturation.
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2SD2178
Silicon NPN epitaxial planar type
For low-frequency output amplification
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 50 5 2 3 1.5 150 −55 to +150 Unit V V V A A W °C °C
2.5±0.1
• Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
10.8±0.2
0.65±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
■ Features
3.8±0.2
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.
2SD2178 Datasheet
