0.05
+0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation.
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC.
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Transistors
2SD2177
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SB1434 I Features
• Low collector to emitter saturation voltage VCE(sat) • Ccomplementary pair with 2SB1434 • Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45−0.05
+0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating 50 50 5 3 2 1 150 −55 to +150
Unit V V V A A W °C °C
1.2±0.1 0.65 max.
0.1 0.45+ − 0.
2SD2177 Datasheet
