q q q
0.65 max. 1.0 1.0
Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. 0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification Complementary to 2SB1446
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping.
0.
2SD2179 Datasheet
