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2SD2179 - Silicon PNP Transistor

Datasheet Summary

Features

  • q q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • 1 Symbol VCBO VCEO VEBO ICP IC PC.
  • Tj Tstg Ratings 50 50 5 7 5 1 150.
  • 55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 Not.

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Datasheet Details

Part number 2SD2179
Manufacturer Panasonic Semiconductor
File Size 39.01 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SD2179 Datasheet
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Full PDF Text Transcription

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Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. 0.
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