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Power Transistors
2SD2573
www.DataSheet4U.com Silicon NPN triple diffusion planar type
For high current amplification, power amplification
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 60 6 3 6 1.5 150 −55 to +150 Unit V V V A A W °C °C
2.5±0.1
• Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
10.8±0.2
0.65±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
■ Features
3.8±0.2
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.
2SD2573 Datasheet
