Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VBEO.
SS-mini type package
0.12+0.03.
0.01
3 1.60±0.05 0.85+0.05.
0.03 (0.375)
1 0.27±0.02
2 (0.80)
(0.50)(0.50)
0 to 0.02
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipatio.
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Transistors
2SD2620J
Silicon NPN epitaxial planer type
Unit: mm
1.60+0.05 –0.03 1.00±0.05 0.80±0.05
For low-frequency amplification I Features
• High forward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • High emitter to base voltage VBEO • SS-mini type package
0.12+0.03 –0.01
3 1.60±0.05 0.85+0.05 –0.03 (0.375)
1 0.27±0.02
2 (0.80)
(0.50)(0.50)
0 to 0.02
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 100 100 15 50 20 125 125 −55 to +125 Unit V V V mA mA mW °C °C
5°
0.70+0.05 –0.
2SD2620J Datasheet