2SD2621 - Silicon NPN epitaxial planar type Transistor
Panasonic
Key Features
s.
High forward current transfer ratio hFE.
Low collector-emitter saturation voltage VCE(sat).
High emitter-base voltage (Collector open) VEBO
3
0.15 min. 0.80±0.05 1.20±0.05
(0.40) (0.40).
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol.
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Transistors
2SD2621
Silicon NPN epitaxial planar type
For low-frequency driver amplification
0.33+0.05 –0.02
Unit: mm
0.10+0.05 –0.02
■ Features
• High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO
3
0.15 min. 0.80±0.05 1.20±0.05
(0.40) (0.40)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 100 100 15 20 50 100 125 −55 to +125 Unit V V V mA mA mW °C °C
1 : Base 2 : Emitter 3 : Collector
5˚
0.80±0.05 1.20±0.05
0.15 min.
0.23+0.
2SD2621 Datasheet
