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Transistors
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
(0.425)
■ Features
• Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
0.3+0.1 –0.0 3
0.15+0.10 –0.05
1.25±0.10
2.1±0.1 5˚
1
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 150 150 −55 to +150 Unit V V V A A mW °C °C
10˚
(0.65) (0.65) 1.3±0.1 2.0±0.2
0.9±0.1
0.9+0.2 –0.
2SD2623 Datasheet
