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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2693, 2SD2693A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1724, 2SB1724A ■ Features
• Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw.
15.0±0.5
Unit: mm
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
φ 3.2±0.1
13.7±0.2 4.2±0.2 Solder Dip
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) (Base open) Collector current Peak collector current
*
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.
2SD2693 Datasheet
