2SD620 - Silicon N-Channel MOSFET

Panasonic

Key Features

q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65±0.15 1.5.
0.05 +0.25 0.95 2.9.
0.05 1 1.9±0.2 +0.2 0.95 3 0.4.
0.05 +0.1 2 1.45 +0.2 1.1.
0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VG.

2SD620 silicon n-channel mosfet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SD620
Manufacturer	Panasonic
File Size	36.27 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SD620 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD627	SILICON POWER TRANSISTOR	SavantIC
2SD627	NPN Transistor	INCHANGE
2SD628	Silicon NPN Darlington Power Transistor	INCHANGE
2SD60	NPN Transistor	INCHANGE
2SD600	PNP/NPN Epitaxial Planar Silicon Transistor	Sanyo Semicon Device

Other Datasheets by Panasonic

Part Number	Description
2SD601A	Silicon NPN Transistor
2SD602	Silicon NPN Transistor
2SD602A	Silicon NPN Transistor
2SD637	Silicon NPN Transistor
2SD638	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silicon MOS FETs (Small Signal) 2SK620 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 +0.2 1.1 –0.