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2SD638 - Silicon PNP Transistor

Datasheet Summary

Features

  • 1.5 1.5 R0.9 R0.9 0.4 1.0±0.1 R 0. 7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 0.85 0.55±0.1 3 2 emitter voltage 2SD639 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 2.5 2.5 V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC.
  • 71 M Type Mold Package s Electrical Characteristics Parameter Coll.

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Datasheet Details

Part number 2SD638
Manufacturer Panasonic Semiconductor
File Size 40.08 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SD638 Datasheet
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Full PDF Text Transcription

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Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 6.9±0.1 2.5±0.1 1.0 Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 q q Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 7 1 0.5 600 150 –55 ~ +150 Unit V 1.0 0.45±0.05 1 s Features 1.5 1.5 R0.9 R0.9 0.4 1.0±0.1 R 0. 7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 0.85 0.55±0.
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