2SD662B
Key Features
- 5 R0.9 R0.9
- 85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 250 400 200 400 5 100 70 600 150 -55 ~ +150 Unit 3
- 55±0.1
- 25±0.05
- 45±0.05 2 1 V
- 5 2.5 emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD662 2SD662B (Ta=25˚C) Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 100V, IB = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 10 200 400 5 30 30 220 150 1.2 V MHz pF min typ max 2 Unit µA V V Emitter to base voltage Forward current transfer ratio 2SD662 2SD662B Collector to emitter saturation voltage Transition frequency Collector output capacitance
- h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank
- 1±0.2 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
- 0±0.1 R 0.
- 5±0.1 7 1 Transistor PC - Ta 800 120 Ta=25˚C 700 100 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA IB=2.0mA 100
