Overview: Silicon MOS FETs (Small Signal) 2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.) For switching
2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: −1 to 2V) q Low Ron 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings −30 ±20 −100 −200 150 150 −55 to +150 Unit V V mA mA mW °C °C 0.7±0.1 0 to 0.1 0.2±0.1 1: Gate 2: Source 3: Drain EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 2C s Electrical Characteristics (Ta = 25°C)
Parameter Drain current Gate cut-off current Gate threshold voltage Forward transfer admittance Drain to source ON-resistance Turn-on time Turn-off time Symbol IDSS IGSS Vth | Yfs | RDS(on) ton toff Conditions VDS = −30V, VGS = 0 VGS = ±20V, VDS = 0 VDS = −5V, ID = −1µA VDS = −5V, ID = −10mA VGS = −5V, ID = −10mA VDD = −5V, VGS = −5 to 0V, RL = 200Ω VDD = −5V, VGS = −5 to 0V, RL = 200Ω −1 8 50 100 25 75 min typ max − 0.1 ±1 −2 Unit µA µA V mS Ω µs µs 0.15–0.05 +0.1 0.3–0 +0.
