0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.2
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol VGDS ID IG PD Tch Tstg
Ratings 65.
20.
10 150 150.
55 to +150
Unit V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.1
EIAJ: SC-70 S-Mini Type Package (3-pin)
Marking Symbol (Example): 4M s Electrical C.
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Silicon Junction FETs (Small Signal)
2SJ364
Silicon P-Channel Junction FET
For analog switch
unit: mm
2.1±0.1
s Features
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.2
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol VGDS ID IG PD Tch Tstg
Ratings 65 −20 −10 150 150 −55 to +150
Unit V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.
2SJ364 Datasheet
