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Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
6.9±0.1
(0.4)
2.5±0.1 (1.0)
(1.0) 3.5±0.1 2.4±0.2
(1.5) (1.5)
R 0.9 R 0.7
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
*
Symbol VDS VGSO ID IDP PD * Tch Tstg
Ratings 80 20 ±0.5 ±1 1 150 −55 to +150
Unit V V A A W °C °C
1
1.0±0.1
(0.85)
1.25±0.05
0.45±0.05
0.55±0.1
2 (2.5)
3
(2.
2SK0615 Datasheet
