0.75 max. 4.0±0.2 (0.8) 3.0±0.2
2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150.
55 to +150 Unit V V mA mA mW °C °C
0.45+0.20.
0.10 (2.5) (2.5) 0.45+0.20.
0.10 0.7±0.1
15.6±0.5
G High-speed switching G Allowing to supply with the radial taping
(0.8).
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Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
unit: mm
For switching I Features
0.75 max.
4.0±0.2 (0.8) 3.0±0.2
2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C
0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1
15.6±0.5
G High-speed switching G Allowing to supply with the radial taping
(0.8)
7.
2SK0655 Datasheet
