I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150.
55 to +150 Unit V V mA mA mW °C °C
0.45+0.20.
0.10 (2.5) (2.5) 0.45+0.20.
0.10 0.7±0.1
1
15.6±0.5
G High-speed switching G Small drive current owing to high input inpedance G High electrostatic break.
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Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C
0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1
1
15.6±0.5
G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage
2
3
(0.8)
0.75 max.
7.
2SK0656 Datasheet
