1.0±0.1
(0.85)
1.25±0.05
0.45±0.05
0.55±0.1
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150.
55 to +150 Unit V V mA mA mW °C °C
1 (2.5) 2 (2.5) 3
1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package
Internal Connection
D
G
S
I Electrical Characteristics (Ta.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon MOS FETs (Small Signal)
2SK0657 (2SK657)
Silicon N-Channel MOS FET
Unit: mm
For switching
6.9±0.1
(0.4)
2.5±0.1 (1.0)
(1.0) 3.5±0.1 2.0±0.2 2.4±0.2
(1.5) (1.5)
I Features
1.0±0.1
(0.85)
1.25±0.05
0.45±0.05
0.55±0.1
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150 −55 to +150 Unit V V mA mA mW °C °C
1 (2.5) 2 (2.
2SK0657 Datasheet
