• Part: 2SK2340
  • Description: Silicon N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Panasonic
  • Size: 43.21 KB
Download 2SK2340 Datasheet PDF
Panasonic
2SK2340
2SK2340 is Silicon N-Channel Power MOSFET manufactured by Panasonic.
Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS- PD Tch Tstg Ratings 900 ±30 ±5 ±10 45 50 2 150 - 55 to +150 Unit V 13.7- 0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3 2.6±0.1 0.7±0.1 V A A m J W °C °C 1: Gate 2: Drain 3: Source TO-220E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature - TC = 25°C Ta = 25°C L = 3.6m H, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 200V, ID = 3A VGS = 10V, RL = 66.6Ω Conditions VDS = 720V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1m A, VGS = 0 VDS = 25V, ID = 1m A VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1400 VDS = 20V, VGS = 0, f = 1MHz 140 60 30 60 60 170 2.5 62.5 1.5 900 2 2 3.5 - 1.6 5 2.8 min typ max 100 ±1 Unit µA µA V V Ω S V p F p F p F ns ns ns ns °C/W °C/W Input capacitance (mon Source) Ciss Output capacitance (mon Source) Reverse transfer capacitance (mon Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere Power F-MOS FETs Area of safe operation (ASO) 100 60 PD  Ta Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=2W)...