Overview: Silicon Junction FETs (Small Signal) 2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.4 unit: mm
1.6±0.15 0.8±0.1 0.4 q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG PD Tch Tstg Ratings −40 −40 ±1 10 125 125 −55 to +125 Unit V V mA mA mW °C °C 1: Source 2: Drain 3: Gate EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol (Example): EB s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS IGSS VDS VGSC | Yfs | Coss
* Conditions VDS = 10V, VGS = 0 VGS = −20V, VDS = 0 IG = −10µA, VDS = 0 VDS = 10V, ID = 1µA VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min 50 −40 typ 0 to 0.1 0.2±0.1 max 200 − 0.5 Unit µA nA V −1.3 0.05 1 0.4 0.4 −3 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) Q 50 to 100 EBQ R 70 to 130 EBR S 100 to 200 EBS Marking Symbol 0.15–0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) 0.2–0.05 +0.
