2SK2383 Datasheet | Panasonic

Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 φ3.2±0.1 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS- PD Tch Tstg Ratings 500 ±30 ±13 ±26 170 100 3 150 - 55 to +150 Unit V V 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5˚ A A m J W °C °C 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature - TC = 25°C Ta = 25°C L = 2m H, IL = 13A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 150V, ID = 7A VGS = 10V, RL = 21.4Ω Conditions VDS = 400V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1m A, VGS = 0 VDS = 25V, ID = 1m A VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0 1700 VDS = 20V, VGS = 0, f = 1MHz 300 120 30 70 90 210 1.25 41.67 5 500 1 0.45 8 - 1.7 5 0.6 min typ max 100 ±1 Unit µA µA V V Ω S V p F p F p F ns ns ns ns °C/W °C/W Input capacitance (mon Source) Ciss Output capacitance (mon Source) Reverse transfer capacitance (mon Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere Power F-MOS FETs Area of safe operation (ASO) 100 IDP...