q Avalanche Unit : mm
0.7±0.1
energy capability guaranteed switching
16.7±0.3
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
q High-speed q No
secondary breakdown
7.5±0.2
ø3.1±0.1
s.
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Power F-MOS FETs
2SK2538
2SK2538
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
0.7±0.1
energy capability guaranteed switching
16.7±0.3
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
q High-speed q No
secondary breakdown
7.5±0.2
ø3.1±0.1
s Applications
q High-speed q For
switching (switching mode regulator)
4.0
high-frequency power amplification
14.0±0.5
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 +0.2 -0.1
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 250 ±30 ±2 ±4 10 30 2 150 –55 to +150 Unit V V A A mJ W ˚C ˚C
2.54±0.25 5.08±0.
2SK2538 Datasheet
