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2SK620 - N-Channel MOSFET

Key Features

  • q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65±0.15 1.5.
  • 0.05 +0.25 0.95 2.9.
  • 0.05 1 1.9±0.2 +0.2 0.95 3 0.4.
  • 0.05 +0.1 2 1.45 +0.2 1.1.
  • 0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VG.

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Datasheet Details

Part number 2SK620
Manufacturer Panasonic
File Size 36.27 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK620 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon MOS FETs (Small Signal) 2SK620 Silicon N-Channel MOS FET For switching 2.8 –0.3 +0.2 unit: mm 0.65±0.15 s Features q High-speed switching q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 1.45 +0.2 1.1 –0.