LN69 Datasheet GaAs Infrared Light Emitting Diode

Manufacturer: Panasonic

Overview: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (1.5) 1 2.54 1.6 For optical control systems 5.5±0.2 1.0 15.5±1.0 1.0 4.5±0.3 ø3.6±0.2 ø3.0±0.

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Datasheet Details

Part number	LN69
Manufacturer	Panasonic
File Size	40.40 KB
Description	GaAs Infrared Light Emitting Diode
Download	LN69 Download (PDF)

Key Features

High-power output, high-efficiency : Ie = 3.5 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg ratings 75 50 1 3.

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