LN69 - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LN69
Manufacturer	Panasonic Semiconductor
File Size	40.40 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN69 Datasheet
Additional preview pages of the LN69 datasheet.

High-power output, high-efficiency : Ie = 3.5 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg ratings 75 50 1 3.

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Published: Mar 22, 2005 |