LN65 - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LN65
Manufacturer	Panasonic Semiconductor
File Size	44.63 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN65 Datasheet
Additional preview pages of the LN65 datasheet.

High-power output, high-efficiency : PO = 5.5 mW (typ. ) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.5 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 Not soldered ø3.5±0.2 4.2±0.3 2.3 1.9 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Rev.

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Published: Mar 22, 2005 |