LN66L Datasheet GaAs Infrared Light Emitting Diode

Manufacturer: Panasonic

Overview: Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.

📥 Download Datasheet

LN66L gaas infrared light emitting diode by Panasonic - Datasheet Preview

Datasheet Details

Part number	LN66L
Manufacturer	Panasonic
File Size	42.27 KB
Description	GaAs Infrared Light Emitting Diode
Download	LN66L Download (PDF)

Key Features

High-power output, high-efficiency :PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr.

LN66L Distributor & Price

Compare LN66L distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Panasonic

Part Number	Description
LN66	GaAs Infrared Light Emitting Diode
LN66F	GaAs Infrared Light Emitting Diode
LN61C	GaAs INFRARED LIGHT EMITTING DIODE
LN65	GaAs Infrared Light Emitting Diode
LN671	GaAlAs Infrared Light Emitting Diode
LN69	GaAs Infrared Light Emitting Diode