LN66F - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LN66F
Manufacturer	Panasonic Semiconductor
File Size	41.81 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN66F Datasheet
Additional preview pages of the LN66F datasheet.

High-power output, high-efficiency : Ie = 13.0 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.

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Published: Mar 22, 2005 |