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LNA2W01L - GaAs Infrared Light Emitting Diode

Features

  • High-power output, high-efficiency : PO = 4.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) 1.05±0.1 1 0.5±0.1 Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Narrow directivity : θ = 18 deg. (typ. ) Ultra-miniature double ended package 2.8±0.2 R0.9 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forwa.

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Datasheet Details

Part number LNA2W01L
Manufacturer Panasonic
File Size 44.34 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LNA2W01L Datasheet
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Infrared Light Emitting Diodes LNA2W01L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 4.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 1.05±0.1 1 0.5±0.1 Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 45 ˚ 2.2±0.15 (0.7) 0.15 (0.7) 1.8 2.8±0.2 1.8 Narrow directivity : θ = 18 deg. (typ.) Ultra-miniature double ended package 2.8±0.2 R0.
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